? semiconductor components industries, llc, 2008 february, 2008 - rev. 8 1 publication order number: mur480e/d mur480eg, mur4100eg switchmode power rectifiers ultrafast ?e'' series with high reverse energy capability these state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? 20 mj avalanche energy guaranteed ? excellent protection against voltage transients in switching inductive load circuits ? ultrafast 75 nanosecond recovery time ? 175 c operating junction temperature ? low forward voltage ? low leakage current ? high temperature glass passivated junction ? reverse voltage to 1000 v ? these are pb-free devices* mechanical characteristics: ? case: epoxy, molded ? weight: 1.1 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped in plastic bags, 5,000 per bag ? available tape and reel, 1,500 per reel, by adding a rl'' suffix to the part number ? polarity: cathode indicated by polarity band maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage mur480e mur4100e v rrm v rwm v r 800 1000 v average rectified forward current (square wave; mounting method #3 per note 2) i f(av) 4.0 @ t a = 35 c a non-repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 70 a operating junction and storage temperature range t j , t stg -65 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. ultrafast rectifier 4.0 amperes, 800-1000 volts http://onsemi.com axial lead case 267 style 1 a = assembly location mur4xxx = device number (see page 2) yy = year ww = work week = pb-free package marking diagram a mur 4xxx yyww (note: microdot may be in either location) see detailed ordering and shipping information on page 2 of this data sheet. ordering information
mur480eg, mur4100eg http://onsemi.com 2 thermal characteristics rating symbol value unit maximum thermal resistance, junction-to-ambient r ja see note 2 c/w electrical characteristics characteristic symbol max unit maximum instantaneous forward voltage (note 1) (i f = 3.0 amps, t j = 150 c) (i f = 3.0 amps, t j = 25 c) (i f = 4.0 amps, t j = 25 c) v f 1.53 1.75 1.85 v maximum instantaneous reverse current (note 1) (rated dc voltage, t j = 150 c) (rated dc voltage, t j = 25 c) i r 900 25 a maximum reverse recovery time (i f = 1.0 amp, di/dt = 50 amp/ s) (i f = 0.5 amp, i r = 1.0 amp, i rec = 0.25 amp) t rr 100 75 ns maximum forward recovery time (i f = 1.0 amp, di/dt = 100 amp/ s, recovery to 1.0 v) t fr 75 ns controlled avalanche energy (see test circuit in figure 6) w aval 20 mj 1. pulse test: pulse width = 300 s, duty cycle 2.0%. ordering information device marking package shipping ? mur480e mur480e axial lead* 500 units / bulk mur480eg axial lead* 500 units / bulk mur480erl axial lead* 1500 / tape & reel mur480erlg axial lead* 1500 / tape & reel MUR480ES MUR480ES axial lead* 500 units / bulk MUR480ESg axial lead* 500 units / bulk mur4100e mur4100e axial lead* 500 units / bulk mur4100eg axial lead* 500 units / bulk mur4100erl axial lead* 1500 / tape & reel mur4100erlg axial lead* 1500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *this package is inherently pb-free.
mur480eg, mur4100eg http://onsemi.com 3 mur480eg, mur4100eg figure 1. typical forward voltage v f, instantaneous voltage (volts) 0.2 0.8 0.4 1.2 0.03 0.1 0.3 0.2 2.0 1.0 0.02 20 7.0 3.0 0.5 5.0 0.05 , instantaneous forward current (amps) f v r , reverse voltage (volts) 0 200 100 400 40 100 0.01 0.004 200 1.0 0.4 0.2 20 4.0 2.0 10 t j = 175 c i r 300 700 figure 2. typical reverse current* t a , ambient temperature ( c) 050 0 4.0 2.0 6.0 10 8.0 i 200 figure 3. current derating (mounting method #3 per note 2) figure 4. power dissipation 0 2.0 2.0 4.0 6.0 8.0 0 4.0 i f(av) , average forward current (amps) p f(av) figure 5. typical capacitance 0.7 10 0.07 1.6 1.8 2 100 c t j = 175 c 25 c 600 500 0.1 0.04 0.02 , reverse current ( a) 100 c 25 c 100 150 , average power dissipation (watts) i pk i av dc squarewave i 1.0 3.0 5.0 10 1.0 3.0 , average forward current (amps) f(av) square wave dc 0 rated v r r ja = 28 c/w 0.6 1.0 1.4 250 40 20 30 70 10 v r , reverse voltage (volts) c, capacitance (pf) 50 60 7.0 8.0 9.0 10 20 30 50 40 0 t j = 25 c 400 5.0 10 (capacitive load) =20 800 900 1000 0.002 0.001 1000 *the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these same curves if v r is sufficiently below rated v r . 5.0 7.0 9.0 t j = 175 c
mur480eg, mur4100eg http://onsemi.com 4 t 0 t 1 t 2 t v dd i d i l bv dut mercury switch figure 6. test circuit figure 7. current-voltage waveforms +v dd dut 40 h coil v d i l s 1 i d the unclamped inductive switching circuit shown in figure 6 was used to demonstrate the controlled avalanche capability of the new e'' series ultrafast rectifiers. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total ener gy transferred is equal to the energy stored in t he inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). the oscilloscope picture in figure 8, shows the information obtained for the mur8100e (similar die construction as the mur4100e series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 v, and using equation (2) the energy absorbed by the mur8100e is approximately 20 mjoules. although it is not recommended to design for this condition, the new e'' series provides added protection against those unforeseen transient viruses that can produce unexplained random failures in unfriendly environments. w aval 1 2 li 2 lpk bv dut bv dut Cv dd w aval 1 2 li 2 lpk figure 8. current-voltage waveforms channel 2 : i l 0.5 amps/div. channel 1 : v dut 500 volts/div. time base : 20 s/div. equation (1): equation (2): ch1 ch2 ref ref ch1 ch2 acquisitions saveref source 1 217:33 hrs stack a 20 s 953 v vert 500v 50mv
mur480eg, mur4100eg http://onsemi.com 5 lead length, l (in) mounting method 1/8 1/4 1/2 units 1 2 3 50 58 r ja 51 53 59 61 28 c/w c/w c/w typical values for r ja in still air data shown for thermal resistance junction-to-ambient (r ja ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. note 2 - ambient mounting data mounting method 1 mounting method 2 mounting method 3 3/4 55 63 l l p.c. board where available copper surface area is small. p.c. board with 1-1/2 x 1-1/2 copper surface
mur480eg, mur4100eg http://onsemi.com 6 package dimensions axial lead case 267-05 (do-201ad) issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. cathode (polarity band) 2. anode 1 2 k a k d b dim min max min max millimeters inches a 0.287 0.374 7.30 9.50 b 0.189 0.209 4.80 5.30 d 0.047 0.051 1.20 1.30 k 1.000 --- 25.40 --- on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 mur480e/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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